COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) MULTI-WELL APPARATUS FOR ELECTRICAL CELL ASSESSMENT
COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) MULTI-WELL APPARATUS FOR ELECTRICAL CELL ASSESSMENT
Disclosed herein are semiconductor devices to provide a CMOS-compatible, wafer-scale, multi-well platform that can be used for biomedical or other applications, and methods to operate the same. In some embodiments, circuitry is provided underneath a multiple-well array to electrically interface with electrodes in the wells. To interface with electrodes in a large array, circuitry may be fabricated on a single silicon (Si) wafer having a dimension that is at least the same or larger than that of the multiple-well array. According to one aspect of the present disclosure, standard CMOS fabrication process such as those known to be used in a standard semiconductor foundry may be used without expensive customization for complex fabrication procedures. This may help the production cost to be lowered in some cases.
❖President and Fellows of Harvard College·Donhee Ham; Wenxuan Wu; Jeffrey T. Abbott; Henry Julian Hinton; Hongkun Park·§ 2/16 权利要求·G1N 33/487, B1L 3/9