N型掺杂碳化硅单晶的制备方法、碳化硅单晶、功率器件
本发明涉及一种N型掺杂碳化硅单晶的制备方法、碳化硅单晶、功率器件,涉及半导体领域,包括:将籽晶、长晶原料和N型掺杂原料利用物理气相传输法进行长晶,得到N型掺杂碳化硅单晶;其中,所述N型掺杂原料包括:氮气和氨气的混合气。本发明提供的制备方法,通过在N型掺杂原料中引入特定的氨气,利用氨气的配合效果,在反应过程中不断形成的HCN分子的摩尔分数,以提高氮原子的掺杂均匀性,从而实现电阻率均匀性的提升。
APPLICANTS
Browse source applicant names and unchanged name fields from imported patent records.
These are name-based results, not verified legal entities. Identical names may refer to different people or organizations; aliases and historical names are not merged.
This page matches the complete original name field. It may contain multiple applicants or another recorded party role. Name boundaries and legal identities have not been verified; punctuation is preserved, not split.
1 indexed patent records
Patent counts refer to distinct records held by this site, not an applicant’s complete portfolio. A joint name field is not a single company.
Verified corpus date coverage and last import time are not currently available. Publication dates on patent records are not import dates. Cached directory results may lag behind new imports.
Search the local original applicant field containing this full text. Results may include joint lists or longer names; this is not an exact identity search.
Search patents with this applicant condition