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WAFER GRINDING METHODS

发明专利审中
14权利要求 · 2 独立
§ Ⅰ

卷宗概要

发明人

YiJing Eric CHONG; Rowena ZARATE; Marites ROQUE; PeiEe Linda CHUA; KaiChong CHAN

IPC 分类

B24B 37/4H1L 21/304

CPC 分类

B24B37/42H1L21/304

A wafer grinding method comprises: providing a wafer base comprising a front side and a back side, wherein the front side comprises a solder ball area and an annular peripheral area surrounding the solder ball area; forming a patterned photoresist layer on the front side of the wafer base, wherein the patterned photoresist layer at least partially covers the annular peripheral area but exposes the solder ball area; forming solder balls on the solder ball area; attaching a back grinding tape on the front side to cover both the solder ball area and the annular peripheral area; and performing a back grinding process on the back side of the wafer base.

原文(中文)

A wafer grinding method comprises: providing a wafer base comprising a front side and a back side, wherein the front side comprises a solder ball area and an annular peripheral area surrounding the solder ball area; forming a patterned photoresist layer on the front side of the wafer base, wherein the patterned photoresist layer at least partially covers the annular peripheral area but exposes the solder ball area; forming solder balls on the solder ball area; attaching a back grinding tape on the front side to cover both the solder ball area and the annular peripheral area; and performing a back grinding process on the back side of the wafer base.