TUNGSTEN PRECURSORS FOR DEPOSITION PROCESSES
卷宗概要
发明人
Robert Halbach; Pei Zhao; Cameron Barbee
IPC 分类
CPC 分类
Compositions are provided. A composition comprises a tungsten pentachloride compound. The tungsten pentachloride compound has an orthorhombic crystal structure as determined using Single-Crystal X-ray Diffraction. A method comprises obtaining a precursor, vaporizing the precursor to obtain a vaporized precursor, and exposing, under vapor deposition conditions, a substrate to the vaporized precursor. The precursor comprises a tungsten pentachloride compound having an orthorhombic crystal structure as determined by Single-Crystal X-Ray Diffraction. Related precursors and related methods are also provided, among other things.
原文（中文）
Compositions are provided. A composition comprises a tungsten pentachloride compound. The tungsten pentachloride compound has an orthorhombic crystal structure as determined using Single-Crystal X-ray Diffraction. A method comprises obtaining a precursor, vaporizing the precursor to obtain a vaporized precursor, and exposing, under vapor deposition conditions, a substrate to the vaporized precursor. The precursor comprises a tungsten pentachloride compound having an orthorhombic crystal structure as determined by Single-Crystal X-Ray Diffraction. Related precursors and related methods are also provided, among other things.