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SUBSTRATE PROCESSING APPARATUS

发明专利审中
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20权利要求 · 3 独立
§ Ⅰ

卷宗概要

发明人

Jae Hoon KIM; Kyung Rim KIM; Dong Hee HAN

IPC 分类

C23C 16/44C23C 16/52G1N 29/4

CPC 分类

C23C16/4402C23C16/52G1N29/43

A substrate treating apparatus includes a pipe for providing a precursor and having a first zone and a second zone. A first heater provides heat to an inside of the pipe in the first zone, and a first ultrasonic sensor in the first zone generates a first ultrasonic wave directed to the inside of the pipe and receives a first reflected wave from the inside of the pipe. A second heater provides heat into the inside of the pipe in the second zone, and a second ultrasonic sensor in the second zone generates a second ultrasonic wave directed to the inside of the pipe and receives a second reflected wave from the inside of the pipe. A controller analyzes the first reflected wave and the second reflected wave to determine whether a contaminant has formed inside the pipe in the first zone or the second zone.

原文(中文)

A substrate treating apparatus includes a pipe for providing a precursor and having a first zone and a second zone. A first heater provides heat to an inside of the pipe in the first zone, and a first ultrasonic sensor in the first zone generates a first ultrasonic wave directed to the inside of the pipe and receives a first reflected wave from the inside of the pipe. A second heater provides heat into the inside of the pipe in the second zone, and a second ultrasonic sensor in the second zone generates a second ultrasonic wave directed to the inside of the pipe and receives a second reflected wave from the inside of the pipe. A controller analyzes the first reflected wave and the second reflected wave to determine whether a contaminant has formed inside the pipe in the first zone or the second zone.