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VERTICAL PHOTO-ASSISTED METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) APPARATUS AND DEPOSITION METHOD USING SAME

发明专利审中
6权利要求 · 1 独立
§ Ⅰ

卷宗概要

发明人

XINQIANG WANG; ZHAOYING CHEN; FANG LIU; BOWEN SHENG; DUO LI

IPC 分类

C30B 25/12C30B 25/14C30B 29/54

CPC 分类

C30B25/12C30B25/14C30B29/54

A vertical photo-assisted metal organic chemical vapor deposition (MOCVD) apparatus and a deposition method using the same are provided. In the vertical photo-assisted MOCVD apparatus, a light field vertically acts on the layered reactant gas flows, and interaction paths between the light field and the reactant gas flows are short, which reduces the required light source power, lowers the design complexity of the photo-assisted MOCVD apparatus, improves the safety of the photo-assisted MOCVD apparatus and the utilization efficiency of the light field power. In the vertical photo-assisted MOCVD apparatus, through self-rotation and revolution of the growth substrates with the substrate susceptor, active reactants generated by the light field are uniformly distributed between the growth substrates and within each growth substrate in the growth chamber, thereby achieving high uniformity large-size photo-assisted MOCVD epitaxial growth.

原文(中文)

A vertical photo-assisted metal organic chemical vapor deposition (MOCVD) apparatus and a deposition method using the same are provided. In the vertical photo-assisted MOCVD apparatus, a light field vertically acts on the layered reactant gas flows, and interaction paths between the light field and the reactant gas flows are short, which reduces the required light source power, lowers the design complexity of the photo-assisted MOCVD apparatus, improves the safety of the photo-assisted MOCVD apparatus and the utilization efficiency of the light field power. In the vertical photo-assisted MOCVD apparatus, through self-rotation and revolution of the growth substrates with the substrate susceptor, active reactants generated by the light field are uniformly distributed between the growth substrates and within each growth substrate in the growth chamber, thereby achieving high uniformity large-size photo-assisted MOCVD epitaxial growth.