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METHOD AND SYSTEM FOR DETECTING PRINTING DEFECTS IN A PHOTOLITHOGRAPHY MASK

发明专利审中
30权利要求 · 3 独立
§ Ⅰ

卷宗概要

发明人

Martin van Driel; Bjoern Froehlich; Niklas Georg

IPC 分类

G6T 7/G1N 21/956G3F 1/44G3F 7/

CPC 分类

G6T7/12G1N21/95607G3F7/70625G3F7/7065G3F7/70666G3F7/706837G3F7/706841G1N2021/95676G3F1/44G6T2207/20081G6T2207/30144G6T2207/30148

A method for detecting printing defects in a photolithography mask that will print on a wafer when using the photolithography mask in a specific photolithography system to print semiconductor structures on the wafer, the method comprising: acquiring a first aerial image of the photolithography mask using a mask inspection system; generating a second aerial image of the photolithography mask by applying a machine learning model () to the first aerial image, wherein the machine learning model is trained to map a first aerial image acquired by a mask inspection system to a second aerial image that emulates the application of the specific photolithography system to the photolithography mask; and detecting printing defects in the photolithography mask by comparing the second aerial image to a reference image.

原文(中文)

A method for detecting printing defects in a photolithography mask that will print on a wafer when using the photolithography mask in a specific photolithography system to print semiconductor structures on the wafer, the method comprising: acquiring a first aerial image of the photolithography mask using a mask inspection system; generating a second aerial image of the photolithography mask by applying a machine learning model () to the first aerial image, wherein the machine learning model is trained to map a first aerial image acquired by a mask inspection system to a second aerial image that emulates the application of the specific photolithography system to the photolithography mask; and detecting printing defects in the photolithography mask by comparing the second aerial image to a reference image.