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REDUCTION IN CHIP AREA THROUGH DESIGN-TECHNOLOGY CO-OPTIMIZATION

发明专利审中
20权利要求 · 3 独立
§ Ⅰ

卷宗概要

发明人

Ankit Rehani; Chao Qin; Mohan Vamsi Dunga

IPC 分类

G11C 5/14G11C 11/404G11C 11/4096H10B 41/20H10B 41/35H10B 41/41H10B 41/50H10B 43/20H10B 43/35H10B 43/40H10B 43/50

CPC 分类

G11C5/146G11C11/4045G11C11/4096H10B41/35H10B41/41H10B43/35H10B43/40H10B41/20H10B41/50H10B43/20H10B43/50

Multi-stage charge pumps use a modular structure in which each stage include a pair of legs, or current paths, between the stage input and the stage output. Each leg includes a stage boosting capacitor having a first plate connected to the current path and a second plate connected to receive one of a pair of non-overlapping clock signals. Each leg has an NMOS charge transfer switch connected between the stage input and the first plate of the stage boosting capacitor and a PMOS charge transfer switch connected between the first plate of the stage boosting capacitor and the stage output. To reduce charge pump area, the NMOS and PMOS charge transfer switches are formed to have a same resistance value when in an on state, where to achieve this the NMOS charge transfer switches are formed with wider control gates than the PMOS charge transfer switches.

原文(中文)

Multi-stage charge pumps use a modular structure in which each stage include a pair of legs, or current paths, between the stage input and the stage output. Each leg includes a stage boosting capacitor having a first plate connected to the current path and a second plate connected to receive one of a pair of non-overlapping clock signals. Each leg has an NMOS charge transfer switch connected between the stage input and the first plate of the stage boosting capacitor and a PMOS charge transfer switch connected between the first plate of the stage boosting capacitor and the stage output. To reduce charge pump area, the NMOS and PMOS charge transfer switches are formed to have a same resistance value when in an on state, where to achieve this the NMOS charge transfer switches are formed with wider control gates than the PMOS charge transfer switches.