SELECTOR ONLY MEMORY WRITE OPERATION
卷宗概要
发明人
Mark Lin; Dimitri Houssameddine; Raj Ramanujan; Christopher J. Petti
IPC 分类
CPC 分类
Technology for programming selector-only memory cells in a cross-point memory structure. The threshold switching memory element may include, but is not limited to, an Ovonic Threshold Switch (OTS). The memory system removes Vth drift in the threshold switching memory elements prior to programming. The Vth drift is removed by applying a first voltage and a second voltage having opposite polarities to all of the SOM cells to be programmed. Then, two programming voltages having the two polarities are applied to program the cells to two states.
原文（中文）
Technology for programming selector-only memory cells in a cross-point memory structure. The threshold switching memory element may include, but is not limited to, an Ovonic Threshold Switch (OTS). The memory system removes Vth drift in the threshold switching memory elements prior to programming. The Vth drift is removed by applying a first voltage and a second voltage having opposite polarities to all of the SOM cells to be programmed. Then, two programming voltages having the two polarities are applied to program the cells to two states.