SOFT PROGRAMMING METHOD AND ERASING METHOD FOR MEMORY DEVICE
卷宗概要
发明人
Chih-Wei Hu; Chih-Chang Hsieh; Teng-Hao Yeh; Hang-Ting Lue
IPC 分类
CPC 分类
A soft programming method and an erasing method for a memory device having n (positive integer) word lines are provided. The soft programming method includes: applying m (positive integer) programming pulses to the j-th word line of the n word lines, where j is a positive integer smaller than n; and determining an initial value of a programming pulse applied to the (j+1)-th to the n-th word lines based on a verification result of applying the m programming pulses to the j-th word line. When the i-th programming pulse, among the m programming pulses applied to the j-th word line, passes verification, the i-th programming pulse is set as the initial value of the programming pulse for the (j+1)-th to the n-th word lines, where i=1 to m. This method is also applicable to a 3D NAND flash memory. The memory device has high capacity and high performance.
原文（中文）
A soft programming method and an erasing method for a memory device having n (positive integer) word lines are provided. The soft programming method includes: applying m (positive integer) programming pulses to the j-th word line of the n word lines, where j is a positive integer smaller than n; and determining an initial value of a programming pulse applied to the (j+1)-th to the n-th word lines based on a verification result of applying the m programming pulses to the j-th word line. When the i-th programming pulse, among the m programming pulses applied to the j-th word line, passes verification, the i-th programming pulse is set as the initial value of the programming pulse for the (j+1)-th to the n-th word lines, where i=1 to m. This method is also applicable to a 3D NAND flash memory. The memory device has high capacity and high performance.