WAFER CLEANING METHOD AND APPARATUS
卷宗概要
申请人
Shanghai Huali Microelectronics Corporation
发明人
Quan ZHANG; Qingpeng ZHAO; Jingang TONG
IPC 分类
CPC 分类
The present disclosure discloses a wafer cleaning method including: providing a wafer; placing the wafer on a chuck in a cleaning chamber, and configuring a first distance between the side not to be cleaned and the surface of the chuck; flowing a protective gas, and configuring a first flow rate of the protective gas; and introducing a cleaning fluid above a side to be cleaned. The magnitude of the first flow rate is configured so that the cleaning fluid does not flow back from the edge of the wafer to the side not to be cleaned. The first distance is configured according to a first pressure formed by the protective gas of the first flow rate on the side not to be cleaned, the first pressure is less than a minimum pressure that causes a pattern structure on the side not to be cleaned of the wafer to collapse.
原文（中文）
The present disclosure discloses a wafer cleaning method including: providing a wafer; placing the wafer on a chuck in a cleaning chamber, and configuring a first distance between the side not to be cleaned and the surface of the chuck; flowing a protective gas, and configuring a first flow rate of the protective gas; and introducing a cleaning fluid above a side to be cleaned. The magnitude of the first flow rate is configured so that the cleaning fluid does not flow back from the edge of the wafer to the side not to be cleaned. The first distance is configured according to a first pressure formed by the protective gas of the first flow rate on the side not to be cleaned, the first pressure is less than a minimum pressure that causes a pattern structure on the side not to be cleaned of the wafer to collapse.