A METHOD OF MANUFACTURING BOTTOM THICK OXIDE, BTO, IN A TRENCH OF A SEMICONDUCTOR MATERIAL AS WELL AS FIELD OXIDE, FOX, ON TOP OF THE SEMICONDUCTOR MATERIAL, AS WELL AS A RELATED SEMICONDUCTOR DEVICE
卷宗概要
发明人
Tobias Erlbacher; Olrik Schumacher
IPC 分类
CPC 分类
A method of manufacturing Bottom Thick Oxide (BTO) in a trench of a semiconductor material as well as Field Oxide (FOX) on top of the semiconductor material, the method including the steps of providing a trench in the semiconductor material, so that the trench penetrates into the semiconductor material from a surface of the semiconductor material, providing a first material on the surface of the semiconductor material as well as in the provided trench, providing a mask on top of the first material at a location above the surface of the semiconductor material, the location directly relating to a location of the FOX, etching, with the mask provided on top of the first material, the first material on top of the surface of the semiconductor material, so that remaining first material in the trench is or results in the BTO.
原文（中文）
A method of manufacturing Bottom Thick Oxide (BTO) in a trench of a semiconductor material as well as Field Oxide (FOX) on top of the semiconductor material, the method including the steps of providing a trench in the semiconductor material, so that the trench penetrates into the semiconductor material from a surface of the semiconductor material, providing a first material on the surface of the semiconductor material as well as in the provided trench, providing a mask on top of the first material at a location above the surface of the semiconductor material, the location directly relating to a location of the FOX, etching, with the mask provided on top of the first material, the first material on top of the surface of the semiconductor material, so that remaining first material in the trench is or results in the BTO.