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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE TREATMENT APPARATUS
发明专利审中
2浏览
20权利要求 · 2 独立
§ Ⅰ
卷宗概要
发明人
Chihiro UMEDA; Yuta SAITO; Hiroyuki YAMASHITA
IPC 分类
H1L 21/2H1J 37/32
CPC 分类
H1L21/234H1J37/3244H1L21/217H1J2237/338
According to one embodiment, there is provided a method of manufacturing a semiconductor device. The method comprises radically oxidizing a first film by using a plasma generated by a treatment gas including a hydrogen isotope gas.
原文（中文）
According to one embodiment, there is provided a method of manufacturing a semiconductor device. The method comprises radically oxidizing a first film by using a plasma generated by a treatment gas including a hydrogen isotope gas.