METHOD OF FORMING A SEMICONDUCTOR DEVICE INCLUDING A PLASMA DOPING PROCESS

原文（中文）

A method of forming a semiconductor device is proposed. The method includes forming a doped region of a first conductivity type in a SiC semiconductor body. Forming the doped region includes introducing dopants of the first conductivity type into the SiC semiconductor body by at least one ion implantation process. Forming the doped region further includes introducing dopants of the first conductivity type into the SiC semiconductor body by at least one plasma doping process. A penetration depth of the dopants introduced by the at least one ion implantation process is larger than a penetration depth of the dopants introduced by the at least one plasma doping process. The method further includes forming a contact material on a contact surface portion of the doped region. The contact surface portion includes the dopants introduced by at least plasma doping process.