SEMICONDUCTOR DEVICE AND METHOD OF ION IMPLEMENTATION IN A SEMICONDUCTOR DEVICE
卷宗概要
发明人
Katsuaki Saito
IPC 分类
CPC 分类
The present disclosure relates to a semiconductor device, such as a Reverse Conducting Insulated Gate Bipolar Transistor (RC-IGBT), and method of ion implementation in a semiconductor device, especially implementation of light ion particles. A semiconductor device is proposed, including a semiconductor structure layer and a metal electrode on at least one surface of the semiconductor layer, wherein the metal electrode includes at least one thin metal electrode section and at least one thick metal electrode section. Preferably the at least one thin metal electrode section has a thickness of 4 to 7 μm and the at least one thick metal electrode section has a thickness of 9 to 14 μm.
原文（中文）
The present disclosure relates to a semiconductor device, such as a Reverse Conducting Insulated Gate Bipolar Transistor (RC-IGBT), and method of ion implementation in a semiconductor device, especially implementation of light ion particles. A semiconductor device is proposed, including a semiconductor structure layer and a metal electrode on at least one surface of the semiconductor layer, wherein the metal electrode includes at least one thin metal electrode section and at least one thick metal electrode section. Preferably the at least one thin metal electrode section has a thickness of 4 to 7 μm and the at least one thick metal electrode section has a thickness of 9 to 14 μm.