DEVICES INCLUDING TWO-DIMENSIONAL MATERIAL STRUCTURES, AND ELECTRONIC SYSTEMS INCLUDING THE DEVICES
卷宗概要
发明人
Roy E. Meade; Sumeet C. Pandey
IPC 分类
CPC 分类
A device comprises a 2D material structure including one or more monolayers of a transition metal dichalcogenide substantially free of each of X-interstitial defects, X-vacancy defects, M-interstitial defects, M-vacancy defects, MX-vacancy defects, and XX-vacancy defects. The electronic system comprises at least one device and peripheral circuitry electrically connected to the at least one device. The at least one device includes at least one semiconductor device structure comprising a 2D material structure. The 2D material structure includes one or more monolayers of a transition metal dichalcogenide substantially free of each of X-interstitial defects, X-vacancy defects, M-interstitial defects, M-vacancy defects, MX-vacancy defects, and XX-vacancy defects. Additional electronic system is also described.
原文（中文）
A device comprises a 2D material structure including one or more monolayers of a transition metal dichalcogenide substantially free of each of X-interstitial defects, X-vacancy defects, M-interstitial defects, M-vacancy defects, MX-vacancy defects, and XX-vacancy defects. The electronic system comprises at least one device and peripheral circuitry electrically connected to the at least one device. The at least one device includes at least one semiconductor device structure comprising a 2D material structure. The 2D material structure includes one or more monolayers of a transition metal dichalcogenide substantially free of each of X-interstitial defects, X-vacancy defects, M-interstitial defects, M-vacancy defects, MX-vacancy defects, and XX-vacancy defects. Additional electronic system is also described.