System and Method for Improving Atomic Layer Etching Performance

原文（中文）

Disclosed herein are systems and methods for enhancing atomic layer etching (ALE) in semiconductor manufacturing. It focuses on eliminating reactive ion etching (RIE) components during the surface modification step, a key challenge in conventional ALE processes. By integrating a switch mechanism for a blocking capacitor in a path between a bias unit and a chuck, this method significantly improves etching precision and efficiency. The invention can be readily extended to other etching or deposition applications, wherein a surface modification is required without ion interactions with a substrate surface.