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Through Substrate Via Formation on Patterned Substrates

发明专利审中
20权利要求 · 2 独立
§ Ⅰ

卷宗概要

发明人

Elise LAFFOSSE; Charles Thomas CARLSON; Marvin Louis BERNT

IPC 分类

H1L 21/48B23K 26/382B23K 26/402B23K 103/C23C 14/2C23C 14/14G3F 7/16

CPC 分类

H1L21/486B23K26/382B23K26/402C23C14/21C23C14/28C23C14/14G3F7/16B23K2103/30B23K2103/54

Methods of processing a substrate are provided herein. In some embodiments, a method for processing a substrate includes: forming through via openings in a substrate from a back side of the substrate to a front side of the substrate, the substrate having front side metal interconnects disposed on the front side of the substrate that are exposed by the through via openings; and filling the through via openings to form through vias and forming back side metal interconnects on the back side of the substrate, wherein the back side metal interconnects are electrically coupled to the front side metal interconnects by the through vias.

原文(中文)

Methods of processing a substrate are provided herein. In some embodiments, a method for processing a substrate includes: forming through via openings in a substrate from a back side of the substrate to a front side of the substrate, the substrate having front side metal interconnects disposed on the front side of the substrate that are exposed by the through via openings; and filling the through via openings to form through vias and forming back side metal interconnects on the back side of the substrate, wherein the back side metal interconnects are electrically coupled to the front side metal interconnects by the through vias.