Semiconductor Device and Method of Integrating PIC in FOI with Protective Layer over Photonic Region

原文（中文）

A semiconductor device has a first interconnect structure with an opening in the first interconnect structure. A PIC is disposed over the first interconnect structure with a photonic region aligned with the opening in the first interconnect structure. A plurality of conductive vias is formed at least partially through the PIC. An interconnect component having a plurality of conductive vias is disposed over the first interconnect structure. A plurality of bumps can be formed over the first interconnect structure. A second interconnect structure is disposed over the PIC and interconnect component. A protective layer is disposed within the opening over the photonic region. An electrical component is disposed over the second interconnect structure. The protective layer can have a dam formed over the PIC and an epoxy material disposed within the dam over the photonic region. Alternatively, the protective layer has an epoxy material disposed over the photonic region.