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DEVICE, METHOD AND SYSTEM TO PROVIDE ELECTRICAL COUPLING ACROSS ACTIVE LAYERS OF AN INTEGRATED CIRCUIT DIE

发明专利审中
20权利要求 · 3 独立
§ Ⅰ

卷宗概要

发明人

Abhishek Anil Sharma; Sagar Suthram; Pushkar Ranade; Wilfred Gomes; Tahir Ghani; Anand Murthy

IPC 分类

H1L 23/522H1L 21/768H1L 23/528

CPC 分类

H1L23/5226H1L21/76877H1L23/5283

Techniques and mechanisms for an integrated circuit (IC) die to provide electrical coupling across active layers. In an embodiment, an IC die comprises a first active layer, a second active layer, first metallization layers between the first and second active layers, and second metallization layers on the second active layer. A via structure extends through one or more of the second metallization layers, and further through the second active layer and the first metallization layers, to a side of the first active layer. The via structure is electrically coupled to a first interconnect structure of the second metallization layers and a second interconnect structure which is on an opposite side of the first active layer. In another embodiment, a distal end of the via structure adjoins multiple vias which each extend from the second interconnect structure and at least partially through the first active layer.

原文(中文)

Techniques and mechanisms for an integrated circuit (IC) die to provide electrical coupling across active layers. In an embodiment, an IC die comprises a first active layer, a second active layer, first metallization layers between the first and second active layers, and second metallization layers on the second active layer. A via structure extends through one or more of the second metallization layers, and further through the second active layer and the first metallization layers, to a side of the first active layer. The via structure is electrically coupled to a first interconnect structure of the second metallization layers and a second interconnect structure which is on an opposite side of the first active layer. In another embodiment, a distal end of the via structure adjoins multiple vias which each extend from the second interconnect structure and at least partially through the first active layer.