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INDUCTOR STRUCTURES IN HYBRID BONDED DEVICES

发明专利审中
25权利要求 · 5 独立
§ Ⅰ

卷宗概要

发明人

Kishan Jayanand; Nicholas Alexander Polomoff; Viswas Purohit; Nicholas Latham; Ashim Dutta; Chih-Chao Yang

IPC 分类

H1L 23/522H1L 23/H1L 23/48H1L 23/528

CPC 分类

H1L23/5227H1L23/481H1L23/528H1L24/6H1L24/8H10D1/20H1L24/80H1L2224/612H1L2224/8146H1L2224/80948

A device comprises a first semiconductor structure disposed on a second semiconductor structure, and a plurality of metal structures at an interface portion of the first semiconductor structure and the second semiconductor structure. The first semiconductor structure comprises a first part of an inductor structure and the second semiconductor structure comprises a second part of the inductor structure. The plurality of metal structures connect the first part of the inductor structure with the second part of the inductor structure.

原文(中文)

A device comprises a first semiconductor structure disposed on a second semiconductor structure, and a plurality of metal structures at an interface portion of the first semiconductor structure and the second semiconductor structure. The first semiconductor structure comprises a first part of an inductor structure and the second semiconductor structure comprises a second part of the inductor structure. The plurality of metal structures connect the first part of the inductor structure with the second part of the inductor structure.