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SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

发明专利审中
17权利要求 · 2 独立
§ Ⅰ

卷宗概要

IPC 分类

H1L 23/H1L 23/31H1L 25/3

CPC 分类

H1L24/24H1L23/3135H1L24/16H1L24/19H1L25/3H1L2224/16227H1L2224/19H1L2224/24137H1L2224/24146H1L2224/244

A semiconductor device includes a wiring layer, a first semiconductor element, and a first sealing resin. The wiring layer includes a first wiring and a second wiring. The first semiconductor element includes a first electrode and a second electrode disposed opposite to each other in a first direction. The first electrode is electrically bonded to the first wiring. The first sealing resin covers the first semiconductor element. The first sealing resin includes a first surface and a second surface facing away from each other in the first direction. The first surface is closer to the first electrode than to the second electrode. The second wiring is exposed from each of the first surface and the second surface. As viewed in the first direction, the second wiring is spaced apart from the first semiconductor element.

原文(中文)

A semiconductor device includes a wiring layer, a first semiconductor element, and a first sealing resin. The wiring layer includes a first wiring and a second wiring. The first semiconductor element includes a first electrode and a second electrode disposed opposite to each other in a first direction. The first electrode is electrically bonded to the first wiring. The first sealing resin covers the first semiconductor element. The first sealing resin includes a first surface and a second surface facing away from each other in the first direction. The first surface is closer to the first electrode than to the second electrode. The second wiring is exposed from each of the first surface and the second surface. As viewed in the first direction, the second wiring is spaced apart from the first semiconductor element.