Semiconductor Device and Method of Forming Interconnect Structure in HBM Module Using VFM

原文（中文）

A semiconductor device has a first electrical component and a second electrical component. A hybrid flux material is deposited over the first electrical component and/or second electrical component. The hybrid flux material can be a flux material with a non-conductive film or non-conductive paste. The second electrical component is stacked over the first electrical component. The first electrical component can be a semiconductor wafer or semiconductor die, and the second electrical component can be a semiconductor wafer or semiconductor die. An interconnect structure is formed between the first electrical component and second electrical component using a VFM signal. Heat can be applied during or after the VFM signal. The interconnect structure can be a bump. An encapsulant is deposited over the first electrical component and second electrical component. The encapsulated and stacked electrical components can be mounted to an interconnect substrate as a HBM module.