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GAIN-ENHANCED LOW-PROFILE DIELECTRIC RESONATOR ANTENNA WITH A LOADING METAL

发明专利审中
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20权利要求 · 1 独立
§ Ⅰ

卷宗概要

发明人

Kwok Wa Leung; Zhili Su; Kai LU

IPC 分类

H1Q 9/4H1Q 1/42

CPC 分类

H1Q9/485H1Q1/422

A substrate-integrated dielectric resonator, which includes a first substrate layer having a first dielectric constant, and a plurality of metallic patches on a first side of the first substrate layer. The plurality of metallic patches is separated from each other, and is shorted to ground. A dielectric resonator antenna incorporating such a resonator is also described. The DRA has a low profile with an enhanced gain. The DRA can be easily fabricated using low-cost PCB technology. By adding shorted metallic patches to the DR without increasing the antenna size, the gain of DRA is obviously increased.

原文(中文)

A substrate-integrated dielectric resonator, which includes a first substrate layer having a first dielectric constant, and a plurality of metallic patches on a first side of the first substrate layer. The plurality of metallic patches is separated from each other, and is shorted to ground. A dielectric resonator antenna incorporating such a resonator is also described. The DRA has a low profile with an enhanced gain. The DRA can be easily fabricated using low-cost PCB technology. By adding shorted metallic patches to the DR without increasing the antenna size, the gain of DRA is obviously increased.