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SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNEL TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

发明专利审中
14权利要求 · 1 独立
§ Ⅰ

卷宗概要

IPC 分类

H10B 12/H1L 29/10

CPC 分类

H10B12/488H10B12/482H10B12/485H10D62/314

A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a bit line extending in a first direction, a first word line extending in a second direction and disposed over the bit line, and a second word line extending in the second direction and disposed over the bit line. The semiconductor device also includes a first pillar structure overlapping the first word line and the second word line.

原文(中文)

A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a bit line extending in a first direction, a first word line extending in a second direction and disposed over the bit line, and a second word line extending in the second direction and disposed over the bit line. The semiconductor device also includes a first pillar structure overlapping the first word line and the second word line.