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SEMICONDUCTOR STRUCTURE HAVING COMPOSITE MOLD LAYER

发明专利审中
20权利要求 · 3 独立
§ Ⅰ

卷宗概要

发明人

Hwanyeol PARK; Hwanwoo KIM; Jongkyu LEE; Chulhwan CHOI

IPC 分类

H10B 12/H1L 25/65

CPC 分类

H10B12/50H1L25/655H10B12/30

A semiconductor structure of the inventive concepts includes a chip region comprising a plurality of semiconductor chips on the substrate; and a peripheral region at a periphery of the chip region, the peripheral region including a mold structure. The mold structure may include a base mold layer on the substrate, and a composite mold layer on the base mold layer, the composite mold layer comprising at least one bowing sacrificial layer and at least one bowing prevention layer.

原文(中文)

A semiconductor structure of the inventive concepts includes a chip region comprising a plurality of semiconductor chips on the substrate; and a peripheral region at a periphery of the chip region, the peripheral region including a mold structure. The mold structure may include a base mold layer on the substrate, and a composite mold layer on the base mold layer, the composite mold layer comprising at least one bowing sacrificial layer and at least one bowing prevention layer.