SEMICONDUCTOR DEVICE WITH BOUND CHARGE LAYER AND ELECTRONIC SYSTEM INCLUDING THE SAME

原文（中文）

A semiconductor device includes a substrate, a gate stacking structure, and a channel structure. The gate stacking structure includes a plurality of interlayer insulating layers and a plurality of gate electrodes alternately stacked on the substrate. The channel structure at least partially penetrates the gate stacking structure and extends in one direction. The channel structure includes a channel layer coupled with the substrate, a ferroelectric layer at least partially surrounding the channel layer and including a ferroelectric material, and a bound charge layer at least partially surrounding the ferroelectric material and including an insulating material. At least one of a conduction band energy level or a valence band energy level of the insulating material is disposed between a conduction band energy level and a valence band energy level of the ferroelectric material.