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HIGH BANDWIDTH FLASH MEMORY CONTAINING A STACK OF BONDED LOGIC AND MEMORY DIE ASSEMBLIES AND METHODS FOR FORMING THE SAME
发明专利审中
20权利要求 · 2 独立
§ Ⅰ
卷宗概要
发明人
Mitsuteru MUSHIGA; Masaaki HIGASHITANI
IPC 分类
H10B 80/H1L 23/H1L 25/H1L 25/65H1L 25/18
CPC 分类
H10B80/H1L24/8H1L24/80H1L25/657H1L25/18H1L25/50H1L2224/8145H1L2224/80006H1L2224/80895H1L2224/80896H1L2225/6541H1L2924/1431H1L2924/14511
A method of forming a semiconductor includes bonding a first memory die to a first memory-controller die to form a first bonded assembly, bonding second memory die to a second memory-controller die to form a second bonded assembly, and bonding the first bonded assembly to the second bonded assembly to form a memory stack.
原文（中文）
A method of forming a semiconductor includes bonding a first memory die to a first memory-controller die to form a first bonded assembly, bonding second memory die to a second memory-controller die to form a second bonded assembly, and bonding the first bonded assembly to the second bonded assembly to form a memory stack.