SEMICONDUCTOR STRUCTURE WITH CAPACITOR AND METHOD FOR MANUFACTURING THE SAME

原文（中文）

A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate, at least one capacitor structure and a plurality of conductive vias. The semiconductor substrate has a plurality of substrate regions formed in a front side of the semiconductor substrate. The capacitor structure is formed over the front side of the semiconductor substrate and along sidewalls of the substrate regions. The capacitor structure includes a plurality of electrodes and a plurality of capacitor dielectric layers alternately disposed on the semiconductor substrate; and a plurality of connecting structures. Each connecting structure is electrically coupled to one of the plurality of electrodes. Tops of the connecting structures are coplanar with each other and substantially parallel to the front side of the semiconductor substrate. Each of the conductive vias is coupled to one of the electrodes.