SEMICONDUCTOR DEVICE
卷宗概要
发明人
Tetsuo TAKAHASHI
IPC 分类
CPC 分类
A semiconductor device includes a drift layer of a first conductivity type, a channel layer of a second conductivity type, a source layer of the first conductivity type, a gate electrode, a source electrode, and a drain electrode. In a case where an impurity concentration of the drift layer is different in the drift layer, an integral value of an electric field applied to the drift layer is set as a withstand voltage value, and an integral value of an electric field in a case where the impurity concentration of the drift layer is constant in the drift layer is set as a reference value, (the withstand voltage−the reference value)/the reference value is equal to or greater than 0 and equal to or less than 0.32.
原文（中文）
A semiconductor device includes a drift layer of a first conductivity type, a channel layer of a second conductivity type, a source layer of the first conductivity type, a gate electrode, a source electrode, and a drain electrode. In a case where an impurity concentration of the drift layer is different in the drift layer, an integral value of an electric field applied to the drift layer is set as a withstand voltage value, and an integral value of an electric field in a case where the impurity concentration of the drift layer is constant in the drift layer is set as a reference value, (the withstand voltage−the reference value)/the reference value is equal to or greater than 0 and equal to or less than 0.32.