SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
卷宗概要
发明人
Hajime WATAKABE; Masashi TSUBUKU; Toshinari SASAKI; Akihiro HANADA; Takaya TAMARU; Marina MOCHIZUKI; Ryo ONODERA
IPC 分类
CPC 分类
A semiconductor device includes an oxide insulating layer, an oxide semiconductor layer, a gate insulating layer, and a gate electrode. In a first region in which the oxide insulating layer, the oxide semiconductor layer, the gate insulating layer, and the gate electrode are stacked in this order, the gate electrode contains an impurity. In a second region in which the oxide insulating layer, the oxide semiconductor layer, and the gate insulating layer are stacked in this order, the oxide insulating layer, the oxide semiconductor layer, and the gate insulating layer contain the impurity. In a third region in which the oxide insulating layer and the gate insulating layer are stacked in this order, the oxide insulating layer and the gate insulating layer contain the impurity. In a stacked direction of the second region, a concentration profile of the impurity comprises a first peak and a second peak.
原文（中文）
A semiconductor device includes an oxide insulating layer, an oxide semiconductor layer, a gate insulating layer, and a gate electrode. In a first region in which the oxide insulating layer, the oxide semiconductor layer, the gate insulating layer, and the gate electrode are stacked in this order, the gate electrode contains an impurity. In a second region in which the oxide insulating layer, the oxide semiconductor layer, and the gate insulating layer are stacked in this order, the oxide insulating layer, the oxide semiconductor layer, and the gate insulating layer contain the impurity. In a third region in which the oxide insulating layer and the gate insulating layer are stacked in this order, the oxide insulating layer and the gate insulating layer contain the impurity. In a stacked direction of the second region, a concentration profile of the impurity comprises a first peak and a second peak.