INTEGRATED CIRCUIT STRUCTURES HAVING GRATING TRENCH CONTACT WITH TRENCH CONTACT LINK
卷宗概要
发明人
Leonard P. GULER; Kalpesh MAHAJAN; Charles H. WALLACE
IPC 分类
CPC 分类
Integrated circuit structures having grating trench contact with trench contact links are described. For example, an integrated circuit structure includes a vertical stack of horizontal nanowires or a fin. A gate electrode is over the vertical stack of horizontal nanowires of the fin. A conductive trench contact is adjacent to the gate electrode. A dielectric sidewall spacer is between the gate electrode and the conductive trench contact. A gate cut plug extends through the gate electrode and the dielectric sidewall spacer, the gate cut plug extending into but not entirely through the conductive trench contact. A trench contact plug is adjacent to the gate cut plug, the trench contact plug extending through a remainder of the conductive trench contact. A conductive trench contact link is in a recess in the gate cut plug and the trench contact plug, the conductive trench contact.
原文（中文）
Integrated circuit structures having grating trench contact with trench contact links are described. For example, an integrated circuit structure includes a vertical stack of horizontal nanowires or a fin. A gate electrode is over the vertical stack of horizontal nanowires of the fin. A conductive trench contact is adjacent to the gate electrode. A dielectric sidewall spacer is between the gate electrode and the conductive trench contact. A gate cut plug extends through the gate electrode and the dielectric sidewall spacer, the gate cut plug extending into but not entirely through the conductive trench contact. A trench contact plug is adjacent to the gate cut plug, the trench contact plug extending through a remainder of the conductive trench contact. A conductive trench contact link is in a recess in the gate cut plug and the trench contact plug, the conductive trench contact.