INTEGRATED CIRCUIT STRUCTURE WITH ZERO DIFFUSION BREAK AND WRAP-AROUND CONTACT
卷宗概要
发明人
Ting-Hsiang HUNG; Chun Wing YEUNG; Tao CHU; Guowei XU; Robin CHAO; Lin HU; Feng ZHANG; Chia-Ching LIN; Yang ZHANG; Kan ZHANG; Minwoo JANG; Yanbin LUO; Paul A. PACKAN; Chung-Hsun LIN; Anand S. MURTHY
IPC 分类
CPC 分类
Integrated circuit structures having zero diffusion break and wrap-around contacts are described. In an example, an integrated circuit structure includes first and second pluralities of horizontally stacked nanowires or fins, and first and second gate stacks. An epitaxial source or drain structure is between the first plurality of horizontally stacked nanowires or fin and the second plurality of horizontally stacked nanowires or fin, the epitaxial source or drain structure having a cut extending there through to separate a first portion of the epitaxial source or drain structure from a second portion of the epitaxial source or drain structure.
原文（中文）
Integrated circuit structures having zero diffusion break and wrap-around contacts are described. In an example, an integrated circuit structure includes first and second pluralities of horizontally stacked nanowires or fins, and first and second gate stacks. An epitaxial source or drain structure is between the first plurality of horizontally stacked nanowires or fin and the second plurality of horizontally stacked nanowires or fin, the epitaxial source or drain structure having a cut extending there through to separate a first portion of the epitaxial source or drain structure from a second portion of the epitaxial source or drain structure.