INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORM GRID METAL GATE AND TRENCH CONTACT CUT PLUGGED WITH REDUCED-DIMENSION STRUCTURE

原文（中文）

Integrated circuit structures having uniform grid metal gate and trench contact cuts plugged with reduced-dimension dielectric structures are described. For example, an integrated circuit structure includes a vertical stack of horizontal nanowires or a fin. A gate electrode is over the vertical stack of horizontal nanowires or the fin. A conductive trench contact structure is adjacent to the gate electrode. A dielectric sidewall spacer is between the gate electrode and the conductive trench contact structure. A dielectric cut plug structure extends through the gate electrode, through the dielectric sidewall spacer, and through the conductive trench contact. The dielectric cut plug structure has a lateral width adjacent to the gate electrode less than a lateral width adjacent to the conductive trench contact structure.