OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, AND ELECTRONIC DEVICE
卷宗概要
申请人
Japan Display Inc.; IDEMITSU KOSAN CO., LTD.
发明人
Hajime WATAKABE; Masashi TSUBUKU; Toshinari SASAKI; Takaya TAMARU; Marina MOCHIZUKI; Ryo ONODERA; Masahiro WATABE; Daichi SASAKI; Emi KAWASHIMA; Yuki TSURUMA
IPC 分类
CPC 分类
An oxide semiconductor film having crystallinity includes indium (In) and a first metal element (M1) selected from the group consisting of aluminum (Al), gallium (Ga), yttrium (Y), scandium (Sc), and lanthanoid elements. A crystal structure of the oxide semiconductor film is a bixbyite structure. At least a first peak of a (222) plane and a second peak of a (440) plane are observed in a diffraction pattern of the oxide semiconductor film obtained by an out-of-plane XRD measurement using Cu-Kα radiation. A ratio of an intensity of the first peak to an intensity of the second peak is less than or equal to 125.
原文（中文）
An oxide semiconductor film having crystallinity includes indium (In) and a first metal element (M1) selected from the group consisting of aluminum (Al), gallium (Ga), yttrium (Y), scandium (Sc), and lanthanoid elements. A crystal structure of the oxide semiconductor film is a bixbyite structure. At least a first peak of a (222) plane and a second peak of a (440) plane are observed in a diffraction pattern of the oxide semiconductor film obtained by an out-of-plane XRD measurement using Cu-Kα radiation. A ratio of an intensity of the first peak to an intensity of the second peak is less than or equal to 125.