THIN FILM TRANSISTOR AND ELECTRONIC DEVICE
卷宗概要
申请人
Japan Display Inc.; IDEMITSU KOSAN CO., LTD.
发明人
Hajime WATAKABE; Masashi TSUBUKU; Toshinari SASAKI; Takaya TAMARU; Marina MOCHIZUKI; Ryo ONODERA; Masahiro WATABE; Emi KAWASHIMA; Yuki TSURUMA; Daichi SASAKI
IPC 分类
CPC 分类
A thin film transistor includes a metal oxide layer provided over a substrate, an oxide semiconductor layer including a plurality of crystal grains and provided in contact with the metal oxide layer, a gate electrode provided over the oxide semiconductor layer, and a gate insulating layer provided between the oxide semiconductor layer and the gate electrode. When a crystal orientation at each of a plurality of measurement points of the oxide semiconductor layer is obtained based on an electron diffraction pattern obtained by transmitting an electron beam irradiated from a direction intersecting a thickness direction of the oxide semiconductor layer, an average KAM value calculated at the plurality of measurement points is greater than or equal to 0.6 degrees.
原文（中文）
A thin film transistor includes a metal oxide layer provided over a substrate, an oxide semiconductor layer including a plurality of crystal grains and provided in contact with the metal oxide layer, a gate electrode provided over the oxide semiconductor layer, and a gate insulating layer provided between the oxide semiconductor layer and the gate electrode. When a crystal orientation at each of a plurality of measurement points of the oxide semiconductor layer is obtained based on an electron diffraction pattern obtained by transmitting an electron beam irradiated from a direction intersecting a thickness direction of the oxide semiconductor layer, an average KAM value calculated at the plurality of measurement points is greater than or equal to 0.6 degrees.