TRANSISTOR STRUCTURE WITH MULTIPLE VERTICAL THIN BODIES
卷宗概要
申请人
Invention and Collaboration Laboratory, Inc.
发明人
Chao-Chun Lu
IPC 分类
CPC 分类
A transistor structure includes a first semiconductor body, a second semiconductor body and a trench isolation (STI) region. The first semiconductor body has a first convex structure, wherein the first convex structure includes at least 3 first upward extended conductor-oxide-semiconductor interfaces. The at least 3 first upward extended conductor-oxide-semiconductor interfaces are horizontally shifted with each other. The second semiconductor body has a second convex structure, wherein the second convex structure includes at least 3 second upward extended conductor-oxide-semiconductor interfaces, wherein the at least 3 second upward extended conductor-oxide-semiconductor interfaces are horizontally shifted with each other. The trench isolation (STI) region is between the first semiconductor body and the second semiconductor body.
原文（中文）
A transistor structure includes a first semiconductor body, a second semiconductor body and a trench isolation (STI) region. The first semiconductor body has a first convex structure, wherein the first convex structure includes at least 3 first upward extended conductor-oxide-semiconductor interfaces. The at least 3 first upward extended conductor-oxide-semiconductor interfaces are horizontally shifted with each other. The second semiconductor body has a second convex structure, wherein the second convex structure includes at least 3 second upward extended conductor-oxide-semiconductor interfaces, wherein the at least 3 second upward extended conductor-oxide-semiconductor interfaces are horizontally shifted with each other. The trench isolation (STI) region is between the first semiconductor body and the second semiconductor body.