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SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
发明专利审中
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20权利要求 · 3 独立
§ Ⅰ
卷宗概要
申请人
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人
Tzu-Ging LIN
IPC 分类
H10D 62/10H10D 30/1H10D 30/43H10D 30/62H10D 30/67H10D 64/1H10D 89/10
CPC 分类
H10D62/102H10D30/24H10D30/62H10D30/6735H10D64/17H10D89/10H10D30/14H10D30/43H10D30/6757H10D62/121
Embodiments of present disclosure relates to forming isolation structures in gate structures to prevent current leakage through source/drain regions (EPI), transistors, and silicon substrate. The isolation structures may be formed in the gate structure prior to or after the replacement gate sequence.
原文（中文）
Embodiments of present disclosure relates to forming isolation structures in gate structures to prevent current leakage through source/drain regions (EPI), transistors, and silicon substrate. The isolation structures may be formed in the gate structure prior to or after the replacement gate sequence.