SILICON CARBIDE SUBSTRATE HAVING HIGH CRYSTAL QUALITY
卷宗概要
发明人
Jiuyang ZHANG; Lina SU; Weigang ZHANG; Hao LI; Yanchang CHEN; Kexin LV; Chao GAO; Shuchun ZHAO; Qingrui LIANG; Hongyan ZHANG; Yuanhang SUN; Yaohua LIU; Long MA; Jie MA; Xianglin LI
IPC 分类
CPC 分类
A silicon carbide substrate having high crystal quality, belonging to the technical field of silicon carbide production and processing. The silicon carbide substrate comprises a first main surface and a second main surface; the first main surface has a central area and an annular area surrounding the central area, the width of the annular area extending inward from an edge of the substrate being 5-30 mm; the central area is divided into square areas, each having a side length of 5 mm, the internal stress of each square area being less than the internal stress of the annular area, and the internal stress being the stress value detected at least 30 μm vertically extending from the first main surface or the second main surface into the silicon carbide substrate. The internal stress in the central area of the silicon carbide substrate is relatively low.
原文（中文）
A silicon carbide substrate having high crystal quality, belonging to the technical field of silicon carbide production and processing. The silicon carbide substrate comprises a first main surface and a second main surface; the first main surface has a central area and an annular area surrounding the central area, the width of the annular area extending inward from an edge of the substrate being 5-30 mm; the central area is divided into square areas, each having a side length of 5 mm, the internal stress of each square area being less than the internal stress of the annular area, and the internal stress being the stress value detected at least 30 μm vertically extending from the first main surface or the second main surface into the silicon carbide substrate. The internal stress in the central area of the silicon carbide substrate is relatively low.