HETEROEPITAXIAL WAFER FOR THE DEPOSITION OF GALLIUM NITRIDE
卷宗概要
发明人
Brian MURPHY; Sarad Bahadur THAPA
IPC 分类
CPC 分类
A heteroepitaxial wafer includes, in the following order: (1) a substrate made of silicon having a thickness, a diameter, a crystal orientation, a resistivity, a frontside, and a backside; (2) a nucleation layer comprising aluminium nitride (AlN) and 3C-SiC; (3) a first boron nitride layer having a first boron nitride layer thickness; and (4) a layer of nitride having a nitride layer thickness comprising an element out of the list of elements of aluminum, gallium, indium and thallium.
原文（中文）
A heteroepitaxial wafer includes, in the following order: (1) a substrate made of silicon having a thickness, a diameter, a crystal orientation, a resistivity, a frontside, and a backside; (2) a nucleation layer comprising aluminium nitride (AlN) and 3C-SiC; (3) a first boron nitride layer having a first boron nitride layer thickness; and (4) a layer of nitride having a nitride layer thickness comprising an element out of the list of elements of aluminum, gallium, indium and thallium.