HETEROGENEOUS INTEGRATED CIRCUIT
卷宗概要
申请人
Massachusetts Institute of Technology
发明人
Tomas A. Palacios; Pradyot Yadav
IPC 分类
CPC 分类
Aspects of the present disclosure relate to a 3D-millimeter wave integrated circuit (3D-mmWIC configured to improve the efficiency and functionality of radio-frequency (RF) circuits through a multi-material, multi-layered architecture. These aspects can integrate silicon-based complementary metal-oxide semiconductor (CMOS) technology with other semiconductor materials, including Gallium Nitride (GaN), graphene, and/or various semiconductor alloys from the periodic table's Groups II-VI and/or III-V. The 3D-mmWIC can employ a layered structure comprising a silicon substrate, interleaved dielectric layers with embedded metal regions of varying thicknesses and lengths, a semiconductor layer, and/or additional oxide and dielectric layers. This architecture can enable the integration of multiple source, drain, and gate modules, interconnected via a sophisticated metal/oxide network. The disclosed integrated circuit architecture can provide significant advancements in RF circuit integration, offering reductions in size and cost while increasing design flexibility and performance.
原文（中文）
Aspects of the present disclosure relate to a 3D-millimeter wave integrated circuit (3D-mmWIC configured to improve the efficiency and functionality of radio-frequency (RF) circuits through a multi-material, multi-layered architecture. These aspects can integrate silicon-based complementary metal-oxide semiconductor (CMOS) technology with other semiconductor materials, including Gallium Nitride (GaN), graphene, and/or various semiconductor alloys from the periodic table's Groups II-VI and/or III-V. The 3D-mmWIC can employ a layered structure comprising a silicon substrate, interleaved dielectric layers with embedded metal regions of varying thicknesses and lengths, a semiconductor layer, and/or additional oxide and dielectric layers. This architecture can enable the integration of multiple source, drain, and gate modules, interconnected via a sophisticated metal/oxide network. The disclosed integrated circuit architecture can provide significant advancements in RF circuit integration, offering reductions in size and cost while increasing design flexibility and performance.