INTEGRATED CIRCUIT DEVICE
卷宗概要
发明人
Youngjin YANG; Hongshin KIM; Nakyoung YANG
IPC 分类
CPC 分类
An integrated circuit device includes a hammer-shaped sheet separation wall between nanosheet stack structures, thereby improving a patterning margin of a gate electrode and preventing or reducing an effective channel width from being decreased. That is, the integrated circuit device may provide increased stable performance and improved reliability in a nanosheet field-effect transistor.
原文（中文）
An integrated circuit device includes a hammer-shaped sheet separation wall between nanosheet stack structures, thereby improving a patterning margin of a gate electrode and preventing or reducing an effective channel width from being decreased. That is, the integrated circuit device may provide increased stable performance and improved reliability in a nanosheet field-effect transistor.