GATE-ALL-AROUND DEVICES WITH INNER SPACER AND CHANNEL THICKNESS MODULATION

原文（中文）

Techniques are provided to form semiconductor devices with different inner spacer widths and different nanoribbon (e.g., or nanowire, or nanosheet) thickness. In an example, any number of first semiconductor devices include first gate structures around first semiconductor regions and any number of second semiconductor devices include second gate structures around second semiconductor regions. First dielectric inner spacers are provided between the first gate structure and the corresponding source or drain regions of the first semiconductor devices with a first width and second dielectric inner spacers are provided between the second gate structure and the corresponding source or drain regions of the second semiconductor devices with a second width that is greater than the first width. In some such examples, the first semiconductor regions may be thinner compared to the second semiconductor regions to cause a corresponding increase in the threshold voltage of the first semiconductor devices.