ISO IMAGE SENSORS AND METHOD OF FORMING THE SAME

原文（中文）

Various embodiments of the present disclosure are directed towards a semiconductor device with a substrate where the substrate has a plurality of protrusions over a photodetector. An isolation structure is disposed in the substrate and laterally surrounds the photodetector. The isolation structure has a reflective element with a conductive material. A first dielectric layer is over the photodetector, where the first dielectric layer extends into the substrate and is disposed between the reflective element and the substrate. A top surface of the first dielectric layer is irregular. A second dielectric layer is on the first dielectric layer and over the photodetector. A top surface of the second dielectric layer over the plurality of protrusions is irregular. The second dielectric layer extends vertically into the substrate along a surface of the first dielectric layer. The second dielectric layer is disposed along sidewalls and a bottom surface of the reflective element.