METHOD FOR PRODUCING LIGHT EMITTING DEVICE
卷宗概要
发明人
Junya ISHIZAKI
IPC 分类
CPC 分类
The present invention is a method for producing a light emitting device, the method includes the steps of growing an epitaxial layer including at least a light emitting layer having (AlGa)InP (0≤x<1, 0.4≤y≤0.6) as an active layer above a starting substrate, and forming an isolation groove to form a device in the light emitting layer by an ICP dry etching method using inductively coupled plasma, in which a temperature of a substrate including the epitaxial layer at the time of processing to form the isolation groove by the ICP dry etching method is 40° C. or less. Thereby, the method for producing a light emitting device can be provided, in which luminance decrease can be prevented when the light emitting device having a micro-LED size is formed by processing the epitaxial layer having the AlGaInP-based light emitting layer using the ICP dry etching method.
原文（中文）
The present invention is a method for producing a light emitting device, the method includes the steps of growing an epitaxial layer including at least a light emitting layer having (AlGa)InP (0≤x<1, 0.4≤y≤0.6) as an active layer above a starting substrate, and forming an isolation groove to form a device in the light emitting layer by an ICP dry etching method using inductively coupled plasma, in which a temperature of a substrate including the epitaxial layer at the time of processing to form the isolation groove by the ICP dry etching method is 40° C. or less. Thereby, the method for producing a light emitting device can be provided, in which luminance decrease can be prevented when the light emitting device having a micro-LED size is formed by processing the epitaxial layer having the AlGaInP-based light emitting layer using the ICP dry etching method.