HIGH-PERFORMANCE PHOTOACTIVE SYNAPTIC DEVICE USING TWO-DIMENSIONAL FERROELECTRIC SEMICONDUCTOR WITH ASYMMETRIC ENERGY BAND STRUCTURE

原文（中文）

Proposed is a high-performance photoactive neuromorphic synaptic device using a two-dimensional ferroelectric semiconductor with an asymmetric energy band structure, the synaptic device including a gate electrode layer, a buffer insulating layer arranged on the gate electrode layer, a channel layer arranged on the buffer insulating layer, a source electrode of a conductor arranged on the channel layer, and a drain electrode of a conductor arranged on the channel layer, and spaced apart from the source electrode, wherein the channel layer is made of the two-dimensional ferroelectric semiconductor, the buffer insulating layer is made of an insulating material having a lower dielectric constant than that of the channel layer, the gate electrode layer is configured to control an electric field of the channel layer by an applied electrical bias, and the photoactive neuromorphic synaptic device increases a Fermi level as increased electron-hole pairs.