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档案
HETEROSTRUCTURE BASED ON SINGLE-ELEMENT ATOMIC LAYERS INTEGRABLE IN A SUBSTRATE OF A SEMICONDUCTOR ELECTRONIC DEVICE AND MANUFACTURING METHOD SUCH A HETEROSTRUCTURE
发明专利审中
4浏览
§ Ⅰ
卷宗概要
申请人
Consiglio Nazionale Delle Ricerche - CNR
发明人
MOLLE, Alessandro; MARTELLA, Christian; GRAZIANETTI, Carlo; DHUNGANA, Daya Sagar; MASSETTI, Chiara
申请日
Jan 25, 2024
公开日
Jan 6, 2026
IPC 分类
H01LH01LH01LH01L
CPC 分类
H10DH10DH10DH10D