Functionalized Metal and Nitride CMP Slurry
卷宗概要
申请人
DuPont Electronic Materials Holding, Inc.
发明人
Yi GUO; Arthur W. MARTIN
IPC 分类
CPC 分类
The invention provides a chemical mechanical polishing solution for metal and metal nitride substrates. The polishing solution includes a solvent; functionalized carbon-based particles having oxygen-containing functional groups a silica abrasive; a Fenton's catalyst or reagent and a corrosion inhibitor. The functionalized carbon-based particles have oxygen-containing functional groups that react with a peroxy moiety to increase oxygen to carbon atomic ratio on the functionalized carbon-based particles. The functionalized carbon-based particles contain at least 10 weight percent of an sp3-containing structure, the functionalized carbon-based particles include at least 0.01 atomic percent oxygen and a surface of the functionalized carbon-based particles has an atomic oxygen to carbon ratio of at least 0.01.
原文（中文）
The invention provides a chemical mechanical polishing solution for metal and metal nitride substrates. The polishing solution includes a solvent; functionalized carbon-based particles having oxygen-containing functional groups a silica abrasive; a Fenton's catalyst or reagent and a corrosion inhibitor. The functionalized carbon-based particles have oxygen-containing functional groups that react with a peroxy moiety to increase oxygen to carbon atomic ratio on the functionalized carbon-based particles. The functionalized carbon-based particles contain at least 10 weight percent of an sp3-containing structure, the functionalized carbon-based particles include at least 0.01 atomic percent oxygen and a surface of the functionalized carbon-based particles has an atomic oxygen to carbon ratio of at least 0.01.