CMP POLISHING LIQUID, CMP POLISHING LIQUID SET, AND POLISHING METHOD
卷宗概要
发明人
Yasushi KURATA; Masahiro KANNO; Tomohiro IWANO; Noriaki MURAKAMI; Makoto MIZUTANI; Shigeki KUBOTA; Taira ONUMA
IPC 分类
CPC 分类
A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, a zeta potential of the abrasive grains is negative, the additive includes (A1) a 4-pyrone-based compound represented by General Formula (1) below, and a pH is 5.0 or more. A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, a zeta potential of the abrasive grains is negative, the additive includes (A2) a picolinic acid compound, and a pH is 5.0 or more. [In the formula, X, X, and Xare each independently a hydrogen atom or a monovalent substituent.]
原文（中文）
A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, a zeta potential of the abrasive grains is negative, the additive includes (A1) a 4-pyrone-based compound represented by General Formula (1) below, and a pH is 5.0 or more. A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, a zeta potential of the abrasive grains is negative, the additive includes (A2) a picolinic acid compound, and a pH is 5.0 or more. [In the formula, X, X, and Xare each independently a hydrogen atom or a monovalent substituent.]