FILM FORMATION APPARATUS AND FILM FORMATION METHOD OF GALLIUM NITRIDE FILM
卷宗概要
发明人
Masanobu IKEDA; Masumi NISHIMURA
IPC 分类
CPC 分类
A film formation apparatus includes a vacuum chamber capable of evacuating an interior thereof, a substrate support portion provided in the vacuum chamber and configured to support at least one substrate, a target support portion provided in the vacuum chamber and configured to support a target containing nitrogen and gallium, a sputtering gas supply unit connected to the vacuum chamber and configured to supply a sputtering gas to the vacuum chamber, a nitrogen gas supply unit connected to the vacuum chamber and configured to supply a gas containing nitrogen to the vacuum chamber, and a sputtering power supply unit configured to apply an AC voltage to the target. The substrate support portion supports the at least one substrate such that the at least one substrate periodically passes through a region overlapping the target.
原文（中文）
A film formation apparatus includes a vacuum chamber capable of evacuating an interior thereof, a substrate support portion provided in the vacuum chamber and configured to support at least one substrate, a target support portion provided in the vacuum chamber and configured to support a target containing nitrogen and gallium, a sputtering gas supply unit connected to the vacuum chamber and configured to supply a sputtering gas to the vacuum chamber, a nitrogen gas supply unit connected to the vacuum chamber and configured to supply a gas containing nitrogen to the vacuum chamber, and a sputtering power supply unit configured to apply an AC voltage to the target. The substrate support portion supports the at least one substrate such that the at least one substrate periodically passes through a region overlapping the target.